Toshiba unveils new silicon carbide MOSFET for automotive inverters
The innovative design reduces on-resistance, enhancing reliability and efficiency for EVs; mass production set for 2026
Toshiba Electronic Devices & Storage Corp., based in Kawasaki, Japan, has announced the development and test-sample shipments of the X5M007E120, a new 1,200-V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) designed for automotive traction inverters.
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