ROHM Semiconductor unveils new GaN high-electron-mobility transistors for efficient high-power applications
ROHM's GNP2070TD-Z 650-V GaN HEMTs, designed for industrial and automotive systems, aim to enhance energy efficiency and power performance
ROHM Semiconductor announced Feb. 27 its latest development, the GNP2070TD-Z 650-V gallium nitride (GaN) high-electron-mobility transistors (HEMTs), housed in a TO-Leadless (TOLL) package.
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