STMicroelectronics launches fourth-gen silicon carbide MOSFET technology

News
New Product Development
ATI News Team

The new technology enhances power efficiency and robustness for EVs, supporting faster charging and extended driving ranges

As reported in a press release on Sept. 24, STMicroelectronics has unveiled its fourth-generation STPOWER silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) technology.

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