SiC technology — key to BYD's 5-minute EV charging breakthrough
Recent years have witnessed notable improvements in the quality of SiC bare wafers, including epitaxial layers, particularly from mainland Chinese manufacturers
The ability to charge an electric vehicle to a 400-km range in just 5 minutes represents a significant shift in EV technology with advanced semiconductor technology. BYD's Super e Platform achieved this through its newly developed car-grade silicon carbide (SiC) power chips. These chips are rated for 1,500-V operation, essential for supporting the platform's 1,000-V architecture and enabling megawatt-level charging capabilities.
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