Beyond silicon: Exploring the advancements of SiC and GaN in automotive innovation

The automotive industry's shift toward electric vehicles (EVs) is rapidly gaining momentum. This has led to an increased demand for power devices such as Inverters, DC-DC converters and OBC. The need to develop more efficient EVs has drawn focus toward better performing power electronics. The silicon (Si) based power devices have seved the industry well, but the requirement for higher perofrmance is generating interest in wideband-gap (WBG) semicoducor-based power devices.

Introducing a paradigm shift in automotive electronics, wide-bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), stand at the forefront of innovation. Offering distinct advantages over conventional Si semiconductors, WBG devices bring heightened efficiency, reduced power losses, and elevated performance to the automotive industry.

This comprehensive report delves into the transformative potential of WBG semiconductors, elucidating their crucial role as the cornerstone of next-generation automotive electronics. By outlining forecast impacts of technological trends, the report serves as an indispensable guide, empowering industry participants to make informed decisions in harnessing the full potential of WBG semiconductors in automotive innovation.