STMicroelectronics and Innoscience partner for gallium nitride technology development
The collaboration aims to advance GaN power technology, enhancing supply chain resilience across consumer, automotive and industrial sectors
As reported in a press release on March 31, STMicroelectronics and Innoscience, a leading entity in 8-inch gallium nitride on silicon (GaN-on-Si) high-performance low-cost manufacturing, have announced a collaborative agreement focusing on the development and manufacturing of gallium nitride (GaN) technology.
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