FORVIA HELLA integrates Infineon's CoolSiC technology in new 800V charging solution

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Strategic Partnerships
ATI News Team

The collaboration aims to advance e-mobility by enhancing thermal performance and reducing system costs through innovative SiC technology

Source: Getty IMages/ fizkes

In a press release Jan. 29, FORVIA HELLA announced that the company will incorporate the new CoolSiCâ„¢ Automotive MOSFET 1200V from Infineon Technologies into their forthcoming 800V DCDC charging solution. This move signifies a continued partnership between the two companies, aiming to enhance e-mobility through advanced technology. Infineon's CoolSiC MOSFET, designed specifically for onboard charger and DCDC applications within 800V automotive architectures, features a Q-DPAK package and employs top-side cooling (TSC) technology. 

Infineon's CoolSiC Automotive MOSFET 1200V is rooted in Gen1p technology, featuring a design that simplifies the device's incorporation into the PCB by enabling unipolar gate control and reducing component count. The device promises an operating voltage of over 900V without additional insulation coating, thanks to a creepage distance of 4.8 mm. TSC technology offers significant advantages over traditional backside cooling methods, including optimized PCB assembly, reduced parasitic effects, lower leakage inductances, and improved heat dissipation through diffusion soldering with .XT technology. The announcement also confirms the immediate availability of the CoolSiC Automotive MOSFET 1200 V in a Q-DPAK package.

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