GlobalFoundries receives $9.5 million from US government for gallium nitride semiconductor advancement
The funding aims to boost large-scale GaN chip production in Vermont, enhancing applications in automotive, IoT and defense sectors
As reported in a press release on Dec. 4, GlobalFoundries (GF) has announced receiving an additional $9.5 million in funding from the US government to support the advancement of manufacturing gallium nitride (GaN) on silicon semiconductors at its Essex Junction, Vermont, facility.
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