Fraunhofer IZM, partners develop innovative transistors for bidirectional charging
The efforts are part of the EnerConnect project that is funded by Germany’s Ministry of Education and Research
Scientists at the Fraunhofer Institute for Reliability and Microintegration IZM, and the Technical University of Berlin have teamed up with industry partners Delta Electronics Inc., BIT GmbH and Infineon Technologies AG to produce a system with innovative bidirectional blocking gallium nitride (GaN) transistors, Fraunhofer Institute said in a press note on Oct. 21.
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