ROHM launches new metal-oxide-semiconductor field-effect transistor series for automotive applications
The new N-channel MOSFETs by ROHM with low ON-resistance aim to enhance vehicle safety and convenience, meeting AEC-Q101 standards
In a press release on Sept. 19, ROHM has introduced a new series of N-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) named RF9x120BKFRA, RQ3xxx0BxFRA and RD3x0xxBKHRB, designed with low ON-resistance to serve various automotive applications such as motors for doors, seat positioning and LED headlights, amid a growing demand within the automotive sector for more electronic components aimed at enhancing safety and convenience.
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