ROHM introduces new ultrahigh-speed gate driver integrated circuit to maximize performance of gallium nitride devices
The leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in lidar applications
ROHM has developed a gate driver integrated circuit (IC), the BD2311NVX-LB, optimized for gallium nitride (GaN) devices that achieve gate drive speeds on the order of nanoseconds (ns).
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