Transphorm releases 1,200 V GaN-on-Sapphire device simulation model
The device readies Transphorm’s GaN platform for adoption in next-generation automotive and three-phase power systems
In a May 8 press release, Transphorm Inc. (Transphorm) has announced availability of its 1,200 V field-effect transistor (FET) simulation model and preliminary datasheet.
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