Samsung starts 3-nanometer chip production with gate-all-around transistor architecture
The optimized 3 nm process uses 45% less power, performs 23% better, and has a 16% lower surface area
Samsung Electronics has announced that it has started initial production of its 3-nanometer (nm) process node applying a gate-all-around (GAA) transistor architecture, according to a press release on 30 June 2022.
Thank you for visiting S&P Global AutoTechInsight.
*A subscription to News & Analysis includes four S&P Global-selected sector-specific analytical pieces per month. Access to all analytic pieces across all domains comes with a subscription to All Domains. Please click here to subscribe.
To get access to the AutoTechInsight full suite of services, please contact a sales representative by clicking here.
Already a subscriber? Please log in here
