As reported in a press release on May 9, Infineon Technologies and Visteon Corp. signed a memorandum of understanding to collaborate on the development of next-generation EV powertrains. The partnership will involve integrating power conversion devices based on Infineon's semiconductor technology, focusing particularly on wideband gap device technologies. These technologies offer advantages over traditional silicon-based semiconductors, such as improved power density, efficiency and thermal performance, leading to better efficiency and lower system costs in automotive power conversion modules.
The collaboration will potentially see future Visteon EV powertrain applications utilizing Infineon's CoolGaN (Gallium Nitride) and CoolSiC (Silicon Carbide) devices. The applications may include battery junction boxes, direct current to direct current converters, and onboard chargers, ensuring that the resulting powertrain systems meet the standards of efficiency, robustness and reliability.
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