Renesas introduces new gate driver IC for IGBTs, SiC MOSFETs driving EV inverters

News
New Product Development

The new gate driver IC supports 1200V power devices with 3.75kVrms in isolation voltage

Renesas has announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters, according to a press release on 25 January 2023.

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