Toshiba unveils 100V N-channel power MOSFETs for automotive applications

New Products

The XPH4R10ANB has a drain current of 70A and the XPH6R30ANB contains a drain current of 45A

Toshiba Electronic Devices & Storage has unveiled two new 100V N-channel power MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) for automotive 48V electrical system applications, the company said in a press release on 25 December.

Thank you for visiting IHS Markit AutoTechInsight.

*A subscription to News & Analysis includes four IHS Markit-selected sector-specific analytical pieces per month. Access to all analytic pieces across all domains comes with a subscription to All Services. Please click here to subscribe.

For a free daily listing of headlines with limited access please sign up here.

To get access to the AutoTechInsight full suite of services, please contact a sales representative by clicking here.

Already a subscriber? Please log in here

preload preload preload preload preload