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Gallium Nitride-on-Silicon (GaN-on-Si) Technologies – A Big Opportunity for Power Devices

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Acquisition, divestment & Spinoff

Advanced GaN available in a variety of substrates including silicon (Si) and silicon carbide (SiC)

Gallium Nitride (GaN) is becoming a promising semiconductor technology for high performance microwave, radio frequency and millimeter wave devices. GaN devices enable operation at much higher voltages, frequencies, and temperatures over conventional semiconductor materials such as silicon.

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