Source: Getty/ Nikola Ilic

The collaboration aims to enhance EV components through GaN semiconductors, targeting a demo by 2025 and practical application by 2027

Mazda Motor Corp. and ROHM Co. Ltd. have embarked on a collaborative endeavor to develop next-generation automotive components utilizing gallium nitride (GaN) power semiconductors. This partnership, which builds on their ongoing joint development project focused on inverters using silicon carbide (SiC) power semiconductors since 2022, aims to leverage GaN's properties for the advancement of electric vehicle components. GaN is recognized for its superior efficiency over traditional silicon (Si) power semiconductors, offering reduced power conversion losses and enabling the miniaturization of components due to its capacity for high-frequency operation.

The collaboration between Mazda and ROHM is set to explore these advantages extensively, aiming to incorporate them into comprehensive vehicle solutions that focus on weight reduction and innovative design. Both companies have set ambitious goals for this initiative, planning to present a demonstration model by the fiscal year 2025 and aiming for the practical application of these advanced automotive components by the fiscal year 2027. This partnership reflects a significant step toward the enhancement of future EVs through the adoption of cutting-edge semiconductor technology.

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